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 Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SA1075 2SA1076
DESCRIPTION With MT-200 package Complement to type 2SC2525,2SC2526 Fast switching speed Excellent safe operating area APPLICATIONS High frequency power amplifiers Audio power amplifiers Switching regulators DC-DC converters
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL PARAMETER 2SA1075 VCBO Collector-base voltage 2SA1076 2SA1075 VCEO Collector-emitter voltage 2SA1076 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base -160 -7 -12 120 150 -65~150 ae ae V V A W Open emitter -160 -120 V V CONDITIONS VALUE -120 UNIT V
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2SA1075 IC=-1mA ;RBE= 2SA1076 2SA1075 IC=-50|I 2SA1076 IE=-50|I A; IC=0 A; IE=0 CONDITIONS SYMBOL
2SA1075 2SA1076
MIN -120
TYP.
MAX
UNIT
V(BR)CEO
V -160 -120 V -160 -7 -1.8 -1.7 V V V
V(BR)CBO
Collector-base breakdown voltage
V(BR)EBO VCEsat VBE
Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage 2SA1075
IC=-5A;IB=-0.5A IC=-5A;VCE=-5V VCB=-120V; IE=0
ICBO
Collector cut-off current 2SA1076 2SA1075 VCB=-160V; IE=0 VCE=-120V; IB=0
-50
|I
A
ICEO
Collector cut-off current 2SA1076 VCE=-160V; IB=0 VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V IC=-1A ; VCE=-10V 45 60 40 300
-1
mA
IEBO hFE-1 hFE-2 Cob fT
Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency
-50 200
|I
A
pF MHz
Switching times tr ts tf Rise time Storage time Fall time IC=- 7.5A;RL=4| IB1=- IB2=-0.75A -0.15 -0.50 -0.11 |I |I |I s s s
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1075 2SA1076
Fig.2 outline dimensions
JMnic


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